Our offer

We offer you 300 mm CMOS process and device development with front-end integration as well as 300 mm heterogeneous wafer-level system integration.

Processes

• Atomic Layer Deposition (ALD)
• Nanopatterning / E-Beam Lithography
• Chemical Mechanical Polishing (CMP)
• Wafer Metallization
• Wafer Cleaning
• Wafer Services
• 2.5/3D Technologies
• High Density Redistribution
• Wafer bumping
• Wafer bonding
• Thinning/Singulation/Dicing
• High-Density Assembly
• Failure Analysis & Reliability Investigation
• Sensor Development
• Photonic & Plasmonic Systems

Systems

• 3D wafer-level system-in-package WL SiP, CSP
• Application-specific Cu-TSV integration: via middle, via last, backside TSV
• Si-interposer with TSV, multi-layer RDL, micro-cavities and integrated passives
• Glass interposer w/wo TGV, multi-layer RDL and µ-interconnects
• High-density, multi-pitch and size micro-bump or pillar interconnect formation
• Temporary and permanent wafer bonding (adhesive, soldering, direct)
• Hybrid Bonding, Direct bond interconnects (DBI) – W2W, D2
• BEoL Cu-interconnects compatible to 28/22 FDX technology nodes

Integration

• Integration of
  • Non-volatile memories: STT-/SOT-MRAM / Racetrack, RRAM, FeFet, FRAM
  • Spin-based and superconducting qubits
    
  • Micromagnets and superconducting wiring
  • High-capacitance capacitors and resistor networks
  • Integrable sensor systems (thermopiles, IR detectors)